The Static and Dynamic Behaviour of NPT-IGBTs with Different p+-Anode Designs
Two analytical models for the NPT-IGBT are presented. The first model explains the static carrier distribution in the on-state and gives approximate values for the emitter efficiency. The second model describes the turn-off behaviour under inductive load conditions. The results of the analytical models are compared with 2D-simulations obtained with the device simulator TMA-MEDICI. Moreover the influence of a shorted anode on the behaviour of the IGBT is investigated by numerical simulations.
KeywordsSpace Charge Region Emitter Efficiency Accumulation Layer Carrier Distribution Inductive Load
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