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The Static and Dynamic Behaviour of NPT-IGBTs with Different p+-Anode Designs

  • W. Feiler
  • W. Gerlach
  • U. Wiese
Conference paper

Abstract

Two analytical models for the NPT-IGBT are presented. The first model explains the static carrier distribution in the on-state and gives approximate values for the emitter efficiency. The second model describes the turn-off behaviour under inductive load conditions. The results of the analytical models are compared with 2D-simulations obtained with the device simulator TMA-MEDICI. Moreover the influence of a shorted anode on the behaviour of the IGBT is investigated by numerical simulations.

Keywords

Space Charge Region Emitter Efficiency Accumulation Layer Carrier Distribution Inductive Load 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • W. Feiler
    • 1
  • W. Gerlach
    • 1
  • U. Wiese
    • 1
  1. 1.Institut für Werkstoffe der ElektrotechnikTU BerlinBerlinGermany

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