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Simulation of the Conduction Mechanisms in Polycrystalline Silicon Thin Film Transistors

  • S. Mottet
  • M. Kandouci
Conference paper

Abstract

A simulator for the design of polycrystalline silicon thin film transistors, used for the command of flat panel liquid crystal display pixels, is discribed. This simulator is based on the plolycrystalline silicon specific physical equations. It permits to describe both passing and blocking operating modes.

Keywords

Polycrystalline Silicon Dangling Bond Band Tail Blocking Characteristic Polycrystalline Silicon Film 
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References

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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • S. Mottet
    • 1
  • M. Kandouci
    • 1
  1. 1.France Telecom Route de TrègastelCNET Lannion BLannion CédexFrance

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