Analysis of Charge Storage in Polysilicon Contacts

  • D. Bardés
  • R. Alcubilla
Conference paper


We present the use of a commercial 2D device simulator, MEDICI [1], to analyze a polysilicon emitter contact. By using a 2-box model we adjust simultaneously the effective recombination velocity and the stored charge in the polysilicon layer.


Bipolar Transistor Charge Storage Surface Recombination Velocity Heterojunction Bipolar Transistor Polysilicon Layer 
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    Technology Modelling Associates, Inc., MEDICI User’s Manual. March 1992Google Scholar
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    M. Nanba et al, A 64 GHz Si Bipolar Transistor Using In-Situ Phosphorus Doped Polysilicon Emitter Technology,IEDM Technical Digest, p 443. 1991Google Scholar
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    P. Vande Voorde et al, Hybrid Simulation and Sensitivity Analysis for Advanced Bipolar Device Design and Process Developement, B.C.T.M. Technical Digest, p 114. 1990Google Scholar
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    L. M. Castañer and S. Sureda, A Compact Charge Ratio Expression for the Emitter Delay of Polysilicon Emitter Bipolar Transistors, IEEE Transactions on Electron Devices, Submitted.Google Scholar
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    Z. Yu et al, A Comprehensive Analytical and Numerical Model of Polysilicon Emitter Contacts in Bipolar Transistors,IEEE Transactions on Electron Devices, p 773. 1984Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • D. Bardés
    • 1
  • R. Alcubilla
    • 1
  1. 1.Departament d’Enginyeria ElectrònicaETSETB - UPCBarcelonaSpain

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