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Analysis of Charge Storage in Polysilicon Contacts

  • D. Bardés
  • R. Alcubilla
Conference paper

Abstract

We present the use of a commercial 2D device simulator, MEDICI [1], to analyze a polysilicon emitter contact. By using a 2-box model we adjust simultaneously the effective recombination velocity and the stored charge in the polysilicon layer.

Keywords

Bipolar Transistor Charge Storage Surface Recombination Velocity Heterojunction Bipolar Transistor Polysilicon Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. [1]
    Technology Modelling Associates, Inc., MEDICI User’s Manual. March 1992Google Scholar
  2. [2]
    G. L. Patton et al, 75-GHz f t SiGe-Base Heterojunction Bipolar Transistors, IEEE Electron Device Letters, p 171. 1990Google Scholar
  3. [3]
    M. Nanba et al, A 64 GHz Si Bipolar Transistor Using In-Situ Phosphorus Doped Polysilicon Emitter Technology,IEDM Technical Digest, p 443. 1991Google Scholar
  4. [4]
    P. Vande Voorde et al, Hybrid Simulation and Sensitivity Analysis for Advanced Bipolar Device Design and Process Developement, B.C.T.M. Technical Digest, p 114. 1990Google Scholar
  5. [5]
    L. M. Castañer and S. Sureda, A Compact Charge Ratio Expression for the Emitter Delay of Polysilicon Emitter Bipolar Transistors, IEEE Transactions on Electron Devices, Submitted.Google Scholar
  6. [6]
    Z. Yu et al, A Comprehensive Analytical and Numerical Model of Polysilicon Emitter Contacts in Bipolar Transistors,IEEE Transactions on Electron Devices, p 773. 1984Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • D. Bardés
    • 1
  • R. Alcubilla
    • 1
  1. 1.Departament d’Enginyeria ElectrònicaETSETB - UPCBarcelonaSpain

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