Abstract
We present the use of a commercial 2D device simulator, MEDICI [1], to analyze a polysilicon emitter contact. By using a 2-box model we adjust simultaneously the effective recombination velocity and the stored charge in the polysilicon layer.
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References
Technology Modelling Associates, Inc., MEDICI User’s Manual. March 1992
G. L. Patton et al, 75-GHz f t SiGe-Base Heterojunction Bipolar Transistors, IEEE Electron Device Letters, p 171. 1990
M. Nanba et al, A 64 GHz Si Bipolar Transistor Using In-Situ Phosphorus Doped Polysilicon Emitter Technology,IEDM Technical Digest, p 443. 1991
P. Vande Voorde et al, Hybrid Simulation and Sensitivity Analysis for Advanced Bipolar Device Design and Process Developement, B.C.T.M. Technical Digest, p 114. 1990
L. M. Castañer and S. Sureda, A Compact Charge Ratio Expression for the Emitter Delay of Polysilicon Emitter Bipolar Transistors, IEEE Transactions on Electron Devices, Submitted.
Z. Yu et al, A Comprehensive Analytical and Numerical Model of Polysilicon Emitter Contacts in Bipolar Transistors,IEEE Transactions on Electron Devices, p 773. 1984
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© 1993 Springer-Verlag Wien
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Bardés, D., Alcubilla, R. (1993). Analysis of Charge Storage in Polysilicon Contacts. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_72
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_72
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
Online ISBN: 978-3-7091-6657-4
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