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Noise in Si / Si 1- x Ge x n-channel HEMTs and p-channel FETs

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Simulation of Semiconductor Devices and Processes

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Abstract

A theoretical model to evaluate noise in SiGe/Si based n-channel MODFETs and p-channel MOSFETs is presented. The analysis is based on a self-consistent solution of Schrödinger and Poisson’s equations. In this study, n-channel FETs exhibit a better noise performance than that of p-channel FETs. The influence of device parameters on noise properties for this class of devices are presented.

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References

  1. A. F. M. Anwar, and K. W. Liu, “Noise properties of AlGaAs/GaAs MODFETs”, IEEE. Trans. Electron Dev., vol. 40, no. 6, p. 1174, June 1993.

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  2. A. F. M. Anwar, K. W. Liu and R. D. Carroll, “An envelope function description of quantum well formed in strain layer SiGe/Si MODFETs”, to be published in Jour. of Appl. Phys., Aug. 1993.

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  3. Kuo-Wei Liu and A. F. M. Anwar, “A self-consistent calculation of small signal parameters for AIGaAs/GaAs and AIGaAs/InGaAs/GaAs IIEMTs,” to be published in Solid State Electronics.

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  4. Kuo-Wei Liu, A. F. M. Anwar and V. P. Kesan, “A self-consistent model for Si/Si 1-xGex FETs’” submitted to IEEE Electron Device Letter.

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  5. V. P. Kesan, S. Subbanna, P. J. Restle, M. J. Tejwanl, “High performance 0.25 μm p-MOSFETs with silicon-germanium channel for 300K and 77K operation”, IEDM 91, p. 2.2.1–2.2.4, 1991.

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  6. K. Ismail, B. S. Meyerson, S. Rishton, J. Chu, S. Nelson and J. Nocera, “Hightransconductance n-type Si/SiGe modulation-doped field-effect transistors”, IEEE Electron Dev. Lett., vol. 13, no. 5, p. 229–231, May, 1992.

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Author information

Authors and Affiliations

  1. Department of Electrical and Systems Engineering, The University of Connecticut, 260 Glenbrook Road, Storrs, CN, 06269, USA

    A. F. M. Anwar, K. W. Liu & M. M. Jahan

Authors
  1. A. F. M. Anwar
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  2. K. W. Liu
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  3. M. M. Jahan
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Anwar, A.F.M., Liu, K.W., Jahan, M.M. (1993). Noise in Si / Si 1- x Ge x n-channel HEMTs and p-channel FETs. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_67

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_67

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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