Noise in Si / Si1-xGex n-channel HEMTs and p-channel FETs
A theoretical model to evaluate noise in SiGe/Si based n-channel MODFETs and p-channel MOSFETs is presented. The analysis is based on a self-consistent solution of Schrödinger and Poisson’s equations. In this study, n-channel FETs exhibit a better noise performance than that of p-channel FETs. The influence of device parameters on noise properties for this class of devices are presented.
KeywordsQuantum Well Gate Length Minimum Noise Quantum Well Width Minimum Noise Figure
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