Noise in Si / Si1-xGex n-channel HEMTs and p-channel FETs

  • A. F. M. Anwar
  • K. W. Liu
  • M. M. Jahan
Conference paper


A theoretical model to evaluate noise in SiGe/Si based n-channel MODFETs and p-channel MOSFETs is presented. The analysis is based on a self-consistent solution of Schrödinger and Poisson’s equations. In this study, n-channel FETs exhibit a better noise performance than that of p-channel FETs. The influence of device parameters on noise properties for this class of devices are presented.


Quantum Well Gate Length Minimum Noise Quantum Well Width Minimum Noise Figure 
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  1. 1.
    A. F. M. Anwar, and K. W. Liu, “Noise properties of AlGaAs/GaAs MODFETs”, IEEE. Trans. Electron Dev., vol. 40, no. 6, p. 1174, June 1993.CrossRefGoogle Scholar
  2. 2.
    A. F. M. Anwar, K. W. Liu and R. D. Carroll, “An envelope function description of quantum well formed in strain layer SiGe/Si MODFETs”, to be published in Jour. of Appl. Phys., Aug. 1993.Google Scholar
  3. 3.
    Kuo-Wei Liu and A. F. M. Anwar, “A self-consistent calculation of small signal parameters for AIGaAs/GaAs and AIGaAs/InGaAs/GaAs IIEMTs,” to be published in Solid State Electronics.Google Scholar
  4. 4.
    Kuo-Wei Liu, A. F. M. Anwar and V. P. Kesan, “A self-consistent model for Si/Si 1-xGex FETs’” submitted to IEEE Electron Device Letter.Google Scholar
  5. 5.
    V. P. Kesan, S. Subbanna, P. J. Restle, M. J. Tejwanl, “High performance 0.25 μm p-MOSFETs with silicon-germanium channel for 300K and 77K operation”, IEDM 91, p. 2.2.1–2.2.4, 1991.Google Scholar
  6. 6.
    K. Ismail, B. S. Meyerson, S. Rishton, J. Chu, S. Nelson and J. Nocera, “Hightransconductance n-type Si/SiGe modulation-doped field-effect transistors”, IEEE Electron Dev. Lett., vol. 13, no. 5, p. 229–231, May, 1992.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • A. F. M. Anwar
    • 1
  • K. W. Liu
    • 1
  • M. M. Jahan
    • 1
  1. 1.Department of Electrical and Systems EngineeringThe University of ConnecticutStorrsUSA

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