A Smallsignal Databased HEMT Model for Nonlinear Time Domain Simulation

  • T. Felgentreff
  • G. Olbrich
  • P. Russer


Accurate and simple nonlinear modeling of semiconductor devices for use in nonlinear CAD is of significant importance, especially at higher frequencies. In this paper we present a nonlinear HEMT model, which is directly based on measured data. Therefore time consuming optimization techniques during the modeling process are eleminated. The values of the equivalent circuit elements are derived from DC and smallsignal RF measurements and are stored in a twodimensional lookup table. Using this model we calculate the harmonics generated by the nonlinear elements of the device. For the verification of this model we compare the results with measured data and results obtained by conventional empirical HEMT models [1], [2], [3]. The measured and calculated data deviate less than 1.5 dB.


Microwave Theory Databased Model Nonlinear Element Bias Point Equivalent Circuit Element 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • T. Felgentreff
    • 1
  • G. Olbrich
    • 1
  • P. Russer
    • 2
  1. 1.Lehrstuhl für HochfrequenztechnikTechnische Universität MünchenMünchenGermany
  2. 2.Ferdinand-Braun-Institut für HöchstfrequenztechnikBerlinGermany

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