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Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F

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Simulation of Semiconductor Devices and Processes

Abstract

In this paper we present a new 2D finite element compound semiconductor device simulator H2F suited for simulation of the parasitic effects in recess gate MESFETs and HEMTS. Several simulation examples of real devices fabricated in the Nanoelectronics Research Centre at the University of Glasgow illustrates the usefulness of the adopted finite element approach.

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References

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Author information

Authors and Affiliations

  1. Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, The University of Glasgow, Glasgow, G12 8QQ, UK

    A. Asenov, D. Reid, J. R. Barker, N. Cameron & S. P. Beaumont

Authors
  1. A. Asenov
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  2. D. Reid
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  3. J. R. Barker
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  4. N. Cameron
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  5. S. P. Beaumont
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Asenov, A., Reid, D., Barker, J.R., Cameron, N., Beaumont, S.P. (1993). Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_65

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_65

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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