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Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F

  • A. Asenov
  • D. Reid
  • J. R. Barker
  • N. Cameron
  • S. P. Beaumont

Abstract

In this paper we present a new 2D finite element compound semiconductor device simulator H2F suited for simulation of the parasitic effects in recess gate MESFETs and HEMTS. Several simulation examples of real devices fabricated in the Nanoelectronics Research Centre at the University of Glasgow illustrates the usefulness of the adopted finite element approach.

Keywords

Finite Element Simulation Parasitic Effect Biconjugate Gradient Current Continuity Equation Recess Gate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • A. Asenov
    • 1
  • D. Reid
    • 1
  • J. R. Barker
    • 1
  • N. Cameron
    • 1
  • S. P. Beaumont
    • 1
  1. 1.Nanoelectronics Research Centre, Department of Electronics and Electrical EngineeringThe University of GlasgowGlasgowUK

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