Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F
In this paper we present a new 2D finite element compound semiconductor device simulator H2F suited for simulation of the parasitic effects in recess gate MESFETs and HEMTS. Several simulation examples of real devices fabricated in the Nanoelectronics Research Centre at the University of Glasgow illustrates the usefulness of the adopted finite element approach.
KeywordsFinite Element Simulation Parasitic Effect Biconjugate Gradient Current Continuity Equation Recess Gate
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