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Two-Dimensional Numerical Analysis on the Diffusion-Induced Degradation of A1GaAs/GaAs Heterojunction Bipolar Transistors

  • S. Hong
  • J. Kim
  • J. Lee
  • C. Park
  • J. Lee
  • T. Won
Conference paper

Abstract

In this report, the effect of the beryllium in situ and ex situ outdiffusion into the emitter on the device characteristics is investigated by employing two-dimensional device simulators. It revealed that the current driving capability and RF performance are greatly affected by the beryllium diffusion due to thermal stress.

Keywords

Thermal Stress Doping Concentration Collector Current Device Characteristic Diffusion Profile 
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References

  1. [1]
    N. Jourdan, F. Alexandre, Chantal Dubon-Chevallier, Jean Dangla, and Y. Gao, “Heavily Doped GaAs(Be)/GaA1As HBT’s Grown by MBE with High Device Performances and High Thermal Stability,” IEEE Trans. Electron Devices, vol.39, pp.767–770, 1992.CrossRefGoogle Scholar
  2. [2]
    Kazuhiro Mochizuki, Seiichi Isomae, Hiroshi Masuda, Tomonori Tanoue and Chuushiro Kusano, “Stress Effect on Current-Induced Degradation of Be-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors,” Jpn. J. Appt. Phys. vol.31, no.3, pp.751–756, 1992.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • S. Hong
    • 1
  • J. Kim
    • 1
  • J. Lee
    • 1
  • C. Park
    • 2
  • J. Lee
    • 2
  • T. Won
    • 1
  1. 1.Department of Electronic Materials and DevicesCollege of Engineering, Inha UniversityInchunKorea
  2. 2.Electronics and Telecommunications Research InstituteDaejunKorea

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