Two-Dimensional Numerical Analysis on the Diffusion-Induced Degradation of A1GaAs/GaAs Heterojunction Bipolar Transistors
In this report, the effect of the beryllium in situ and ex situ outdiffusion into the emitter on the device characteristics is investigated by employing two-dimensional device simulators. It revealed that the current driving capability and RF performance are greatly affected by the beryllium diffusion due to thermal stress.
KeywordsThermal Stress Doping Concentration Collector Current Device Characteristic Diffusion Profile
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