An Efficient and Accurate Method to Calculate the Two-Dimensional Scattering Rates in Heterostructure Semiconductors

  • A. Abou-Elnour
  • K. Schuenemann
Conference paper


An accurate and efficient method is investigated to solve Schrödinger’s equation by using variational techniques. The electronic states inside heterostructure devices are determined by a self-consistent solution of Poisson’s and Schrödinger’s equations. The closed forms of the wave functions are used to calculate the two-dimensional scattering rates in these structures. The computational efficiency is compared to that of conventional finite difference models.


Wave Function Finite Difference Method Potential Energy Function Heterostructure Semiconductor Scattering Rate 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    K. Yokoyama, J. Appl. Phys. 63, 938 (1988).CrossRefGoogle Scholar
  2. [2]
    A. Cruz and H. Abreu Santos, J. Appl. Phys. 70, 2734 (1991).CrossRefGoogle Scholar
  3. [3]
    I.-H. Tan, G. Snider, L. Chang, and E. Hu, J. Appl. Phys. 68, 4071 (1990).CrossRefGoogle Scholar
  4. [4]
    A. Abou-Elnour and K. Schuenemann, will be published in Proc., MTT-S’93.Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • A. Abou-Elnour
    • 1
  • K. Schuenemann
    • 1
  1. 1.Arbeitsbereich HochfrequenztechnikTU Hamburg-HarburgHamburg 90Germany

Personalised recommendations