Advertisement

A Powerful TCAD System Including Advanced RSM Techniques for Various Engineering Optimization Problems

  • R. Cartuyvels
  • R. Booth
  • S. Kubicek
  • L. Dupas
  • K. M. De Meyer

Abstract

This paper presents the NORMAN/DEBORA TCAD system developed at IMEC to design and optimize sub-micron IC technology using process and device simulators. The versatility of the TCAD system will be shown for two important problems encountered in IC technology design and optimization.

Keywords

Response Surface Methodology Threshold Voltage Process Sensitivity Vacancy State Target Deviation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    R.H. Myers, A.I. Khuri, W.H. Carter, jr. Response Surface Methodology: 1966–1988, Technometrics Vol.31, no.2,pp 137–157,1989Google Scholar
  2. [2]
    R. Cartuyvels, R. Booth, L. Dupas, K. De Meyer.Process Technology Optimization Using An Integrated Process and Device Simulation Sequencing System, ESS-DERC’92,Leuven.Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • R. Cartuyvels
    • 1
  • R. Booth
    • 2
  • S. Kubicek
    • 1
  • L. Dupas
    • 1
  • K. M. De Meyer
    • 1
  1. 1.IMECLeuvenBelgium
  2. 2.AT&TAllentownUSA

Personalised recommendations