A Spectral Method for the Numerical Simulation of Transit-Time Devices

  • M. Schlett


For the numerical simulation of semiconductor devices driven by a periodic voltage a new numerical approach is presented. The method is based on a temporal Fourier expansion to solve time-dependent nonlinear partial differential equations like the Drift-Diffusion Model. Disadvantages and problems of conventionally used time discretizations are avoided. To achieve high-accuracy results an interval based error-analysis is presented.


Fourier Coefficient Semiconductor Device Nonlinear Partial Differential Equation Transcendental Function Newton Algorithm 
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  1. [1]
    S. Sze, Physics of Semiconductor Devices, John Wiley & Sons, 1985Google Scholar
  2. [2]
    M. Reiser, Large-Scale Numerical Simulation in Semiconductor Device Modelling, Comp.Meth.Appl.Mech.Eng., vol.1, 1972, pp 17–38CrossRefGoogle Scholar
  3. [3]
    V. Axelrad, Fourier Method Modelling of Semiconductor Devices,IEEE Trans.CAD, vol.9, 1990, pp 1225–1237Google Scholar
  4. [4]
    S. Selberherr, Analysis and Simulation of Semiconductor Devices,Springer-Verlag, 1984CrossRefGoogle Scholar
  5. [5]
    G. Alefeld, J. Herzberger, Introduction to Interval Computations, Academic Press, 1983MATHGoogle Scholar
  6. [6]
    R. Klatte et al., PASCAL-XSC, Language Reference,Springer-Verlag, 1992MATHGoogle Scholar
  7. [7]
    E. Kaucher, W. Miranker, Self-Validating Numerics for Function Space problems Academic Press, 1984MATHGoogle Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • M. Schlett
    • 1
  1. 1.Institute for Applied MathematicsUniversity of KarlsruheKarlsruheGermany

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