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Simulation of Semiconductor Devices and Processes pp 241–244Cite as

A Spectral Method for the Numerical Simulation of Transit-Time Devices

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Abstract

For the numerical simulation of semiconductor devices driven by a periodic voltage a new numerical approach is presented. The method is based on a temporal Fourier expansion to solve time-dependent nonlinear partial differential equations like the Drift-Diffusion Model. Disadvantages and problems of conventionally used time discretizations are avoided. To achieve high-accuracy results an interval based error-analysis is presented.

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References

  1. S. Sze, Physics of Semiconductor Devices, John Wiley & Sons, 1985

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Author information

Authors and Affiliations

  1. Institute for Applied Mathematics, University of Karlsruhe, Kaiserstraße 12, D-76128, Karlsruhe, Germany

    M. Schlett

Authors
  1. M. Schlett
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Schlett, M. (1993). A Spectral Method for the Numerical Simulation of Transit-Time Devices. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_59

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_59

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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