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Improved Technology Understanding through Using Process Simulation and Measurements

  • T. Feudel
  • W. Fichtner
  • N. Strecker
  • R. Zingg
  • G. Dallmann
  • E. Döring

Abstract

This paper will provide an example for improved technology understanding through a combination of simulation and measurements. Sample mispreparations and design errors could be detected very fast with process simulation, an extremly helpful tool to correlate physical and electrical measurements.

Keywords

Grid Adaption Device Simulation High Leakage Current BiCMOS Process BiCMOS Technology 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    W. Fichtner et al., An Approach to Three-Dimensional VLSI Process Simulation. Electrochem. Soc. Spring Meeting, Honolulu, Hawaii, May 1993, Extended Abstracts, Volume 93–1, p. 1062.Google Scholar
  2. [2]
    N.Guillemot et al., IEEE Trans. Electron Dev., ED-34,1033(1987)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • T. Feudel
    • 1
  • W. Fichtner
    • 1
  • N. Strecker
    • 1
  • R. Zingg
    • 1
  • G. Dallmann
    • 2
  • E. Döring
    • 3
  1. 1.Integrated Systems LaboratoryETH-ZürichZürichSwitzerland
  2. 2.Institut FreseniusAngewandte Festkörperelektronik GmbHDresdenGermany
  3. 3.EM Microelectronic Marin SAMarinSwitzerland

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