Optimization of DMOS Transistors for Smart Power Technologies by Simulation and Response Surface Methods

  • W. Kanert
  • N. Krischke
  • K. Wiesinger


DMOS transistors for smart power technologies were investigated by extensive use of process and device simulation. For the task of simultaneously optimizing a multitude of parameters, experimental designs and response surface methods were used.


Threshold Voltage Contour Line Breakdown Voltage Diffusion Time Response Surface Method 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • W. Kanert
    • 1
  • N. Krischke
    • 1
  • K. Wiesinger
    • 2
  1. 1.Siemens AGSemiconductor GroupMünchenGermany
  2. 2.Siemens AGSemiconductor GroupVillachAustria

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