Abstract
A two-dimensional ensemble Monte Carlo Si-n-MOSFET simulator, considering two-dimensional electron gas behaviour in inversion layer, is presented. Description of inversion layer quantization is solved in the new complex way. Standard bulk Monte Carlo transport model is switched to the two-dimensional electron gas model always when electron reaches the quantized region. Electron energy profiles along the MOSFET channel are studied. Comparison with experimental results, measured on the short channel MOSFET test structures is performed.
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References
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© 1993 Springer-Verlag Wien
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Voves, J. (1993). Monte Carlo MOSFET Simulator Including Inversion Layer Quantization. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_45
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_45
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
Online ISBN: 978-3-7091-6657-4
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