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Mechanical Stress Simulation During Gate Formation of MOS Devices Considering Crystallization-Induced Stress of p-Doped Silicon Thin Films

  • H. Miura
  • N. Saito
  • N. Okamoto

Abstract

Mechanical stress in silicon substrates caused by thin-film deposition of gate material of MOS transistors is analyzed by the finite element method. The results reveal that to predict precise stress distribution, it is very important to take into account the intrinsic stress of the thin films used as gate material as well as thermal stress.

Keywords

Internal Stress Gate Width Silicon Thin Film Gate Material Substrate Stress 
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References

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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • H. Miura
    • 1
  • N. Saito
    • 1
  • N. Okamoto
    • 1
  1. 1.Mechanical Engineering Research LaboratoryHitachi, Ltd.Tsuchiura, IbarakiJapan

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