Accurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation

  • A. Poncet
Conference paper


The aim of this paper is to present viscoelastic models to accurately simulate mechanical stresses which result from volume expansion during thermal oxidation or temperature ramps in silicon technology. Comparisons are made with wafer curvature measurements and it is shown that mechanical stresses can explain the “anomalously” fast initial regime during dry oxidation, without involving any additional chemical mechanism.


Mechanical Stress Stress Relaxation Thermal Oxidation Viscoelastic Model Accurate Simulation 
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  1. [1]
    B.E. Deal, A.S. Grove “Genaral relationship for the thermal oxidation of silicon” J. Appl. Phys., 36 (13), 1965CrossRefGoogle Scholar
  2. [2]
    E. P. Eemisse “Stress in theremal SiO2 dring growth” Appl. Phys. Letter 35 (1) 1 July 1979CrossRefGoogle Scholar
  3. [3]
    A. Poncet “Numerical Simulation of Local Oxidation of Silicon” Summer Course IMEC Leuven, June 1983Google Scholar
  4. [4]
    D.J. Chin, S.-Y. Oh, and R.W. Dutton “A General Solution Method for Two-Dimensional Non Planar Oxidation” IEEE/ED, Vol. ED-30 No. 9, Sept. 1983Google Scholar
  5. [5]
    A. Fargeix and G. Guibaudo “Dry oxidation of silicon: A new model of growth including relaxation of stress by viscous flow” J. Appl Phys. 54 (12) Dec. 1983Google Scholar
  6. [6]
    A. Poncet “Numerical Simulation of Local Oxidation of Silicon” IEEE/CAD, Vol. 4, No. 1, Jan. 1985Google Scholar
  7. [7]
    B. Leroy “Stress and silicon insterstitials during the oxidation of a silicon substrate” Phil. Mag. B 55 (2) 1987CrossRefGoogle Scholar
  8. [8]
    D.-B. Kao, J. P. McVittie, W. D.Nix and K.C. Saraswat “ Two-dimensional Thermal Oxidation of Silicon -II. Modelling Stress Effects in Wet Oxides” IEEE/ED Vol. ED-35, No. 1, Jan. 1988Google Scholar
  9. [9]
    P. Suturdja and W.G. Oldham. IEEE/ED, Vol ED-36, No. 11, Nov. 1989Google Scholar
  10. [10]
    A. Poncet “Numerical simulation of advanced isolation techniques” ICM’91, Cairo, Dec. 1991Google Scholar
  11. [11]
    I. De Wolf, J. Vanhellement, A. Romano-Rodriguez, H. Norström and H.E. Maes “Micro-Raman study of stress distribution in local isolation structures and correlatation with transmission electron microscopy, J. ppl. Phys. 71 (2), 15 Jan. 1992Google Scholar
  12. [12]
    S. Deleonibus “A GIGABIT scalable SILO field isolation using Rapid Thermal Nitridation (RTN) of silicon” ESSDERC’92 Conf. Leuven, Sept. 1992Google Scholar
  13. [13]
    S. K. Jones, P.I. Pearson, C. Hill and A.V. Hetherington - STORM Internal report August 1992CrossRefGoogle Scholar
  14. [14]
    T. Uchida, N. Kotani and N. Tsubouchi “Verification of the Viscoelastic Oxidation Model Using Simple Test Structures” VPAD Conf. Proc. May 1993Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • A. Poncet
    • 1
  1. 1.CNET-CNSFrance TelecomMeylan CédexFrance

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