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Accurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation

  • A. Poncet
Conference paper

Abstract

The aim of this paper is to present viscoelastic models to accurately simulate mechanical stresses which result from volume expansion during thermal oxidation or temperature ramps in silicon technology. Comparisons are made with wafer curvature measurements and it is shown that mechanical stresses can explain the “anomalously” fast initial regime during dry oxidation, without involving any additional chemical mechanism.

Keywords

Mechanical Stress Stress Relaxation Thermal Oxidation Viscoelastic Model Accurate Simulation 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • A. Poncet
    • 1
  1. 1.CNET-CNSFrance TelecomMeylan CédexFrance

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