Oxidation Simulation and Growth Kinetics of Thin SiO2 in Pure N2O

  • S. C. Sun
  • H. Y. Chang


This paper reports the oxide growth behavior of silicon in an N2O ambient using conventional furnace method. With all three different wafer orientations and wider temperature and time ranges used in our experiments, it has been found that the oxide growth can be simulated by the linear-parabolic model. This is in direct contrast with previous reports that the oxide growth is self-limited, or it was described only by the linear rate constant in oxidation.


Oxide Thickness Oxidation Time Oxide Growth Linear Rate Constant Short Oxidation Time 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • S. C. Sun
    • 1
  • H. Y. Chang
    • 1
  1. 1.National Nano Device LaboratoryChiao Tung UniversityHsinchu, TaiwanTaiwan

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