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Oxidation Simulation and Growth Kinetics of Thin SiO 2 in Pure N 2 O

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Simulation of Semiconductor Devices and Processes

Abstract

This paper reports the oxide growth behavior of silicon in an N2O ambient using conventional furnace method. With all three different wafer orientations and wider temperature and time ranges used in our experiments, it has been found that the oxide growth can be simulated by the linear-parabolic model. This is in direct contrast with previous reports that the oxide growth is self-limited, or it was described only by the linear rate constant in oxidation.

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References

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Author information

Authors and Affiliations

  1. National Nano Device Laboratory, Chiao Tung University, Hsinchu, Taiwan, Taiwan

    S. C. Sun & H. Y. Chang

Authors
  1. S. C. Sun
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  2. H. Y. Chang
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Sun, S.C., Chang, H.Y. (1993). Oxidation Simulation and Growth Kinetics of Thin SiO 2 in Pure N 2 O . In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_41

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_41

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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