Critical Assessment of Different Hydrodynamical Models for Avalanche Multiplication Calculation in Silicon Bipolar Transistors

  • A. D. Sadovnikov
  • D. J. Roulston


Different hydrodynamical numerical and analytical models for avalance multiplication coefficient calculation in silicon BJTs are considered. A comparison with experimental data is made.


Critical Assessment IEEE Electron Device Avalanche Multiplication IEDM Tech Simple Analytical Formula 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • A. D. Sadovnikov
    • 1
  • D. J. Roulston
    • 1
  1. 1.Electrical and Computer Engineering DepartmentUniversity of WaterlooWaterlooCanada

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