A Closed Hydrodynamic Model for Hot-Carrier Transport in Submicron Semiconductor Devices
We develop a closed hydrodynamic model within the framework of the single-electron gas approach. Calculations are presented for the small-signal response, diffusion coefficient, spectral density of velocity fluctuations of bulk semiconductors as well as for the concentration, velocity, energy and electric-field profiles of n + nn + structures. The validation of the present model is confirmed by a favourable comparison with analogous Monte Carlo simulations.
KeywordsMonte Carlo Monte Carlo Approach Differential Mobility Electric Field Profile Stationary Distribution Function
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