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A Closed Hydrodynamic Model for Hot-Carrier Transport in Submicron Semiconductor Devices

  • V. Gružinskis
  • E. Starikov
  • P. Shiktorov
  • L. Reggiani
  • M. Saraniti
  • L. Varani
Conference paper

Abstract

We develop a closed hydrodynamic model within the framework of the single-electron gas approach. Calculations are presented for the small-signal response, diffusion coefficient, spectral density of velocity fluctuations of bulk semiconductors as well as for the concentration, velocity, energy and electric-field profiles of n + nn + structures. The validation of the present model is confirmed by a favourable comparison with analogous Monte Carlo simulations.

Keywords

Monte Carlo Monte Carlo Approach Differential Mobility Electric Field Profile Stationary Distribution Function 
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References

  1. [1]
    G. Baccarani, M. Rudan, R. Guerrieri and P. Ciampolini, in “Process and Device Modeling”, ed. by W. L. Engl (Elsevier/North-Holland, New York, 1986).Google Scholar
  2. [2]
    S. Selberherr, “Analysis and Simulation of Semiconductor Devices” (Springer, Wien-New York, 1984).CrossRefGoogle Scholar
  3. [3]
    V. Gružinskis, E. Starikov, P. Shiktorov, L. Reggiani, M. Saraniti and L. Varani, Semicond. Science Technol., in press (July, 1993).Google Scholar
  4. [4]
    V. Gružnskis, E. Starikov, P. Shiktorov, L. Reggiani, M. Saraniti and L. Varani, to be presented at the 12th Noise Conference (St Louis Missouri, 1993).Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • V. Gružinskis
    • 1
  • E. Starikov
    • 1
  • P. Shiktorov
    • 1
  • L. Reggiani
    • 2
  • M. Saraniti
    • 2
  • L. Varani
    • 2
  1. 1.Semiconductor Physics InstituteVilniusLithuania
  2. 2.Dipartimento di Fisica ed Istituto Nazionale di Fisica della MateriaUniversitá di ModenaModenaItaly

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