Physical Modeling of the Enhanced Diffusion of Boron Due to Ion Implantation in Thin Base npn Bipolar Transistors
Using the most advanced physical models of diffusion, we have simulated boron diffusion in the context of a low thermal budget technology for thin-base integrated bipolar transistors. We demonstrated that simulation was able to account for the base broadening due to arsenic implantation in a monocrystalline emitter. Moreover, even in polysilicon emitter bipolar transistors, where the effect of the emitter implantation is suppressed, we found that the extrinsic base implantations could still induce a non negligible base broadening.
KeywordsRapid Thermal Anneal Bipolar Transistor Dopant Profile Free Interstitial Intrinsic Base
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