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Physical Modeling of the Enhanced Diffusion of Boron Due to Ion Implantation in Thin Base npn Bipolar Transistors

  • M. Mouis
  • H. J. Gregory
  • S. Denorme
  • D. Mathiot
  • P. Ashburn
  • D. J. Robbins
  • J. L. Glasper

Abstract

Using the most advanced physical models of diffusion, we have simulated boron diffusion in the context of a low thermal budget technology for thin-base integrated bipolar transistors. We demonstrated that simulation was able to account for the base broadening due to arsenic implantation in a monocrystalline emitter. Moreover, even in polysilicon emitter bipolar transistors, where the effect of the emitter implantation is suppressed, we found that the extrinsic base implantations could still induce a non negligible base broadening.

Keywords

Rapid Thermal Anneal Bipolar Transistor Dopant Profile Free Interstitial Intrinsic Base 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • M. Mouis
    • 1
  • H. J. Gregory
    • 2
  • S. Denorme
    • 1
  • D. Mathiot
    • 1
  • P. Ashburn
    • 2
  • D. J. Robbins
    • 3
  • J. L. Glasper
    • 3
  1. 1.CNET-CNSFrance Telecom Chemin du Vieux ChêneMeylan CédexFrance
  2. 2.Deptartment of Electronics and Computer ScienceUniversity of SouthamptonSouthamptonUK
  3. 3.Defence Research AgencyMalvernUK

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