Simulation of High-Dose Ion Implantation-Induced Transient Diffusion and of Electrical Activation of Boron in Crystalline Silicon

  • H. U. Jäger
Conference paper


Coupled diffusion-reaction equations for boron and for point defects and rather simple initial conditions are used to model the implantation-induced transiently enhanced diffusion and the electrical activation of high-dose boron distributions during annealing.


Point Defect Boron Atom Boron Concentration Incremental Sheet Solid Solubility Limit 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • H. U. Jäger
    • 1
    • 2
  1. 1.Institute for Ion Beam Physics and Materials ResearchResearch Center Rossendorf Inc.DresdenGermany
  2. 2.Guest Scientist in the Fraunhofer-Institute of Microelectronic Circuits and SystemsDresdenGermany

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