Simulation of High-Dose Ion Implantation-Induced Transient Diffusion and of Electrical Activation of Boron in Crystalline Silicon
Coupled diffusion-reaction equations for boron and for point defects and rather simple initial conditions are used to model the implantation-induced transiently enhanced diffusion and the electrical activation of high-dose boron distributions during annealing.
KeywordsPoint Defect Boron Atom Boron Concentration Incremental Sheet Solid Solubility Limit
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