Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions

  • B. Baccus
  • E. Vandenbossche


Boron diffusion and activation at high concentrations are key problems in the formation of shallow P+ junctions. Therefore, it is needed to understand and to predict accuratly the dopant behaviour under these conditions. In this paper, the modeling of boron is discussed, by the use of a non-equilibrium point-defect model, including amorphization and a dynamic clustering component. The initial conditions are of major importance not only for the transient enhanced diffusion, but also for the amount of active dopant. As a result, it is possible to obtain activation levels greater than the solubility limit, as observed experimentally.


Dynamic Cluster Boron Diffusion Vacancy Versus Active Dopant Dopant Behaviour 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • B. Baccus
    • 1
  • E. Vandenbossche
    • 1
  1. 1.IEMN-ISENLille CédexFrance

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