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Construction of Stable Discretization Schemes for the Hydrodynamic Device Model

  • W. H. A. Schilders

Abstract

Several authors have reported numerical problems when simulating semiconductor devices using the hydrodynamic model. In this paper, the cause of these numerical problems is identified. Furthermore, a remedy consisting of adaptive quadrature rules is proposed. The resulting discrete schemes are stable, which is verified both theoretically and demonstrated through several examples.

Keywords

Numerical Problem Mesh Point Quadrature Rule Discrete Solution Midpoint Rule 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    M. Hamza, H. Morel, J.P. Chante, Simulation of bipolar transport in semiconductor p-n junctions using the generalized hydrodynamic equations, COMPEL, vol. 10, pp. 289–299 (1991)Google Scholar
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    W.H.A. Schilders, P.A. Cough, K. Whight, Extrapolation techniques for improved convergence in semiconductor device simulation,Proc. NASECODE VIII Conference, Boole Press, Dublin, pp. 94–95 (1992)Google Scholar
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    R.S. Varga, Matrix iterative analysis, Prentice Hall, London (1962)Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • W. H. A. Schilders
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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