Abstract
An extension of Newton iteration method which provides an effective way to project an initial guess for a subsequent bias conditions — Newton projection Method (NPM) — is described. In particular, we applied the NPM to a system of semiconductor device equations including energy transport. The computational advantages of initial guess projection via NPM are illustrated through examples.
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References
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D. Chen, E. C. Kan, U. Ravaioli, C. Shu and R. W. Dutton, “An improved energy transport model including non-parabolic and non-Maxwellian distribution effects,” IEEE Elec. Dev. Lett., vol. 13, no. 1, pp. 26–28, Jan. 1992
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© 1993 Springer-Verlag Wien
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So, L.L., Chen, D., Yu, Z., Dutton, R.W. (1993). Improvement of Initial Solution Projection in Solving General Semiconductor Equations Including Engery Transport. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_27
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_27
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
Online ISBN: 978-3-7091-6657-4
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