Advertisement

Improvement of Initial Solution Projection in Solving General Semiconductor Equations Including Engery Transport

  • L. L. So
  • D. Chen
  • Z. Yu
  • R. W. Dutton
Conference paper

Abstract

An extension of Newton iteration method which provides an effective way to project an initial guess for a subsequent bias conditions — Newton projection Method (NPM) — is described. In particular, we applied the NPM to a system of semiconductor device equations including energy transport. The computational advantages of initial guess projection via NPM are illustrated through examples.

Keywords

Initial Guess Carrier Temperature Newton Iteration Method Semiconductor Device Simulator Energy Transport Model 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    Z. Yu, R. W. Dutton, and M. Vanzi, “An extension to Newton’s Method in Device Simulators — On an efficient algorithm to evaluate small-signal parameters and to predict initial guess,” IEEE Trans. Computer-aided Design,vol. CAD-6, no. 1, pp. 41–45, Jan. 1987Google Scholar
  2. [2]
    D. Chen, E. C. Kan, U. Ravaioli, C. Shu and R. W. Dutton, “An improved energy transport model including non-parabolic and non-Maxwellian distribution effects,” IEEE Elec. Dev. Lett., vol. 13, no. 1, pp. 26–28, Jan. 1992CrossRefGoogle Scholar
  3. [3]
    D. Chen, E. Sangiorgi, M. R. Pinto, E. C. Kan, U. Ravaioli and R. Dutton, “Analysis of spurious velocity overshoot in hydrodynamic simulations of ballistic diodes,” Proceeding of NUPAD V (Numerical Process and Device Modeling Workshop), Seattle, May 31 — June 1, 1992Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • L. L. So
    • 1
  • D. Chen
    • 2
  • Z. Yu
    • 3
  • R. W. Dutton
    • 3
  1. 1.Applied Theoretical Physics DivisionLos Alamos National LaboratoryLos AlamosUSA
  2. 2.Linear Process DevelopmentNational Semiconductor CorporationSanta ClaraUSA
  3. 3.Integrated Circuits LaboratoryStanford UniversityStanfordUSA

Personalised recommendations