Improvement of Initial Solution Projection in Solving General Semiconductor Equations Including Engery Transport
An extension of Newton iteration method which provides an effective way to project an initial guess for a subsequent bias conditions — Newton projection Method (NPM) — is described. In particular, we applied the NPM to a system of semiconductor device equations including energy transport. The computational advantages of initial guess projection via NPM are illustrated through examples.
KeywordsInitial Guess Carrier Temperature Newton Iteration Method Semiconductor Device Simulator Energy Transport Model
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