Abstract
Three-dimensional concentration dependent diffusions and simultaneous chemical reactions in chemically-amplified photoresists are simulated. Fickian, a linearly increasing diffusivity and an exponentially increasing diffusivity due to free volume increase with T-BOC are considered. Two different grid to processor mappings are proposed in implementing the simulator on massively parallel processors using the Scharfetter and Gummel discretization method. Experimental and simulation results which support an exponential diffusion coefficient are illustrated.
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© 1993 Springer-Verlag Wien
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Tomacruz, E., Zuniga, M., Guerrieri, R., Neureuther, A., Sangiovanni-Vicentelli, A. (1993). 3-D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_26
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_26
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
Online ISBN: 978-3-7091-6657-4
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