Self Diffusion in Silicon Using the Ackland Potential
The study of self-diffusion using the Ackland potential yields an activation energy which lies within the experimental range of 4–5 eV. This study yields a configurational entropy for the interstitial defect of the order of 4.2K. The formation energy of both interstitials and vacancies has been found to be 3.9 ±0.1eV. The migration energy of interstitials is 0.7±0.1 eV and it is 0.2 eV for the vacancies.
KeywordsFormation Energy Migration Energy Configurational Entropy Dangling Bond Bonding Configuration
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