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Self Diffusion in Silicon Using the Ackland Potential

  • M. M. De Souza
  • G. A. J. Amaratunga

Abstract

The study of self-diffusion using the Ackland potential yields an activation energy which lies within the experimental range of 4–5 eV. This study yields a configurational entropy for the interstitial defect of the order of 4.2K. The formation energy of both interstitials and vacancies has been found to be 3.9 ±0.1eV. The migration energy of interstitials is 0.7±0.1 eV and it is 0.2 eV for the vacancies.

Keywords

Formation Energy Migration Energy Configurational Entropy Dangling Bond Bonding Configuration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • M. M. De Souza
    • 1
  • G. A. J. Amaratunga
    • 1
  1. 1.Department of EngineeringCambridge UniversityCambridgeUK

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