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Influence of Oxide-Damage on Degradation-Effects in Bipolar-Transistors

  • W. Bergner
  • B. Seidl
  • H. Wurzer
  • R. Mahnkopf
  • H. Klose
Conference paper

Abstract

To optimize sub-micron bipolar devices with respect to speed and stability, the precize physical mechanisms have to be understood and modeled, which describe the emitter-base breakdown itself, the charge injection into the emitter-base cap oxide and the resulting change of both forward and reverse charactersitics. The purpose of this paper is to analyze the physical effects involved, to model them and to show by comparison with measured data the accuracy of the calculated results.

Keywords

Capture Cross Section Doping Profile Surface Recombination Velocity Reverse Characteristic Post Stress 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • W. Bergner
    • 1
  • B. Seidl
    • 1
  • H. Wurzer
    • 1
  • R. Mahnkopf
    • 1
  • H. Klose
    • 1
  1. 1.Corporate Research and Development, Siemens AGMünchenGermany

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