Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields

  • M. Hackel
  • H. Kosina
  • S. Selberherr


A semiclassical Monte Carlo technique is employed to simulate the steady-state electron transport in silicon dioxide at intermediate and high electric fields. The electronic band-structure is modelled by a single parabolic, by a single nonparabolic as well as an isotropic four-band model. We find that the electronic behavior of silicon dioxide is mainly influenced by a single nonparabolic conduction-band.


Optical Phonon High Electric Field Physical Review Letter Ionic Character Free Flight 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • M. Hackel
    • 1
  • H. Kosina
    • 1
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU ViennaWienAustria

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