Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields
A semiclassical Monte Carlo technique is employed to simulate the steady-state electron transport in silicon dioxide at intermediate and high electric fields. The electronic band-structure is modelled by a single parabolic, by a single nonparabolic as well as an isotropic four-band model. We find that the electronic behavior of silicon dioxide is mainly influenced by a single nonparabolic conduction-band.
KeywordsOptical Phonon High Electric Field Physical Review Letter Ionic Character Free Flight
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- R. Brunetti, C. Jacoboni, F. Venturi, E. Sangiorgi, and B. Ricco. Solid-State Electronics, 32(12):1663–1667, 1989.Google Scholar