Numerical Simulation of Auger-Induced Hot Electron Transport in InGaAsP/InP Double Heterojunction Laser Diodes: Hydrodynamics versus Drift and Diffusion
A strategy for the numerical simulation of Auger-induced hot electron transport related to the electron leakage problem encountered in the design and analysis of InGaAsP/InP laser diodes is presented. The theoretical structure used in conventional device simulation is extended to include the otherwise neglected interactions between the Auger hot electrons and the low-energy carriers in the device. The transport behavior of the Auger hot electrons is examined from both the hydrodynamic and the drift-diffusion perspectives.
KeywordsLaser Diode Average Description Electron Leakage Injection Current Density Current Continuity Equation
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