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Numerical Simulation of Auger-Induced Hot Electron Transport in InGaAsP/InP Double Heterojunction Laser Diodes: Hydrodynamics versus Drift and Diffusion

  • K.-W. Chai
  • Z.-M. Li
  • J. G. Simmons
  • S. P. McAlister
Conference paper

Abstract

A strategy for the numerical simulation of Auger-induced hot electron transport related to the electron leakage problem encountered in the design and analysis of InGaAsP/InP laser diodes is presented. The theoretical structure used in conventional device simulation is extended to include the otherwise neglected interactions between the Auger hot electrons and the low-energy carriers in the device. The transport behavior of the Auger hot electrons is examined from both the hydrodynamic and the drift-diffusion perspectives.

Keywords

Laser Diode Average Description Electron Leakage Injection Current Density Current Continuity Equation 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • K.-W. Chai
    • 1
  • Z.-M. Li
    • 2
  • J. G. Simmons
    • 1
  • S. P. McAlister
    • 2
  1. 1.Centre for Electrophotonic Materials and DevicesMcMaster UniversityHamiltonCanada
  2. 2.Institute for Microstructural SciencesNational Research CouncilOttawaCanada

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