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Importance of Hole Generation on Modeling and Simulation of Schottky and MESFET Structures

  • D. Donoval
  • J. Racko
  • C. M. Snowden

Abstract

A new semiclassical model for the modelling and simulation of the electrical properties of rectifying metal-semiconductor structures has been developed. The contribution of hole current to the total current through the interface is significant for reverse biased Schottky structures and cannot be neglected in the model.

Keywords

Barrier Height Free Carrier Minority Carrier Space Charge Region Electron Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • D. Donoval
    • 1
  • J. Racko
    • 1
  • C. M. Snowden
    • 2
  1. 1.Microelectronics DepartmentSlovak Technical UniversityBratislavaSlovakia
  2. 2.Microwave and Terahertz Technology GroupUniversity of LeedsLeedsUK

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