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Importance of Hole Generation on Modeling and Simulation of Schottky and MESFET Structures

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Book cover Simulation of Semiconductor Devices and Processes

Abstract

A new semiclassical model for the modelling and simulation of the electrical properties of rectifying metal-semiconductor structures has been developed. The contribution of hole current to the total current through the interface is significant for reverse biased Schottky structures and cannot be neglected in the model.

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References

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Author information

Authors and Affiliations

  1. Microelectronics Department, Slovak Technical University, Ilkovicova 3, SQ-81219, Bratislava, Slovakia

    D. Donoval & J. Racko

  2. Microwave and Terahertz Technology Group, University of Leeds, Leeds, LS2 9JT, UK

    C. M. Snowden

Authors
  1. D. Donoval
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  2. J. Racko
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  3. C. M. Snowden
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Cite this paper

Donoval, D., Racko, J., Snowden, C.M. (1993). Importance of Hole Generation on Modeling and Simulation of Schottky and MESFET Structures. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_120

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_120

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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