The MicroMOS 3D Monte Carlo Simulation Program – a Tool for Verifying the MINIMOS Mobility Models
A molecular dynamics Monte Carlo simulation method was developed for examining the behaviour of submicron MOSFET devices. A brief description of the simulation principles and physical backgrounds is presented. Special attention was paid to use first physical principles. An important advantage of the method is that the Coulomb scattering are taken into account inherently. A MOS structure of 0.25 pm channel length and 0.25 pm channel width has been analyzed on an Alpha-chip DEC 7000 computer.
KeywordsCoulomb Scattering Specular Surface Exact Simulation Intervalley Scattering Effective Mass Tensor
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