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The MicroMOS 3D Monte Carlo Simulation Program – a Tool for Verifying the MINIMOS Mobility Models

  • K. Tarnay
  • F. Masszi
  • A. Poppe
  • P. Verhás
  • T. Kocsis
  • Zs. Kohári
Conference paper

Abstract

A molecular dynamics Monte Carlo simulation method was developed for examining the behaviour of submicron MOSFET devices. A brief description of the simulation principles and physical backgrounds is presented. Special attention was paid to use first physical principles. An important advantage of the method is that the Coulomb scattering are taken into account inherently. A MOS structure of 0.25 pm channel length and 0.25 pm channel width has been analyzed on an Alpha-chip DEC 7000 computer.

Keywords

Coulomb Scattering Specular Surface Exact Simulation Intervalley Scattering Effective Mass Tensor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    R.W. Hockney and J.W. Eastwood: Computer Simulation Using Particles. Adam lifter, Bristol and Philadelphia, 1988MATHCrossRefGoogle Scholar
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    K. Tamay et al.: A 3D Monte Carlo Semiconductor Device Simulator for Submicron Silicon MOS Transistors. Accepted paper for the Electrosoft’93, Southampton, 6–8 July 1993Google Scholar
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    K. Fuchs: Proc. Cambr. Phil. Soc. Vol. 34 (1938)Google Scholar
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    K. Tarnay - F. Masszi - A. Poppe - P. Verhás - T. Kocsis: Evaluation and Results Interpretation of 3D Monte Carlo Simulation of Submicron MOS Transistor. Hungarian Telecommunication. Accepted for publication in the July 1993 issue.Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • K. Tarnay
    • 1
    • 2
  • F. Masszi
    • 1
  • A. Poppe
    • 2
  • P. Verhás
    • 2
  • T. Kocsis
    • 2
  • Zs. Kohári
    • 2
  1. 1.Deptartment of Electron DevicesTechnical University of BudapestBudapestHungary
  2. 2.Scanner Laboratory, Electronics Department, Institute of TechnologyUppsala UniversityUppsalaSweden

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