Non-Stationary Transport HBT Modeling Under Non-Isothermal Conditions

  • A. Benvenuti
  • G. Ghione
  • C. U. Naldi
Conference paper


Because of the interaction between thermal and hot carriers effects, neither isothermal nor conventional macro-thermal models are adequate for state-of-the-art power heterojunction bipolar transistors (HBTs); instead, a non-isothermal hot carrier transport model, such as the thermal-fully hydrodynamic model, is required. We apply such a detailed thermal model to the simulation of an AlGaAs/GaAs HBT, comparing the results with those provided by simplified models, and highlighting how deeply both non-stationary transport and self-heating affect the predicted device performance.


IEDM Tech Impact Ionization Coefficient Auger Recombination Coefficient Energy Balance Principle High Injection Condition 
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  1. [1]
    A. Benvenuti et al., IEDM Tech. Dig.-92, pp. 737–740. 1992Google Scholar
  2. [2]
    A. Benvenuti et al., Proc. 4th Int. Work. GaAs Tel., pp. 139–156. 1993Google Scholar
  3. [3]
    J. W. Roberts, S.G. Chamberlain, COMPEL, Vol. 9, pp. 1–22. 1990MATHCrossRefGoogle Scholar
  4. [4]
    A. Benvenuti et al., Proc. NUPAD-92, pp. 155–160. 1992Google Scholar
  5. [5]
    S. Szeto, R. Reif, Solid-St. Electron., Vol. 32, pp. 307–315. 1989CrossRefGoogle Scholar
  6. [6]
    C. T. Wang, Solid-St. Electron., Vol. 28, pp. 783–788. 1985CrossRefGoogle Scholar
  7. [7]
    G. Amaratunga, W. Ying-Jian, Solid-St. Electron., Vol. 33, pp. 1343–1346. 1990CrossRefGoogle Scholar
  8. [8]
    P. Ciampolini et al., IEDM Tech. Dig.-92, pp. 733–736. 1992Google Scholar
  9. [9]
    C. C. Mc Andrew et al., Sem. Sci. Technol., Vol. 3, pp. 758–765. 1988CrossRefGoogle Scholar
  10. [10]
    A. Chryssafis, W. Love, Solid-St. Electron., Vol. 22, pp. 249–256. 1979CrossRefGoogle Scholar
  11. [11]
    L. L. Liou et al., IEEE Trans. Electron Devices, Vol. ED-40, pp. 35–43. 1993CrossRefGoogle Scholar
  12. [12]
    W. Quade et al., IEEE Trans. CAD, Vol. 10, pp. 1287–1294. 1991Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • A. Benvenuti
    • 1
  • G. Ghione
    • 1
  • C. U. Naldi
    • 1
  1. 1.Dipartimento di ElettronicaPolitecnico di TorinoTorinoItaly

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