Non-Stationary Transport HBT Modeling Under Non-Isothermal Conditions

  • A. Benvenuti
  • G. Ghione
  • C. U. Naldi
Conference paper


Because of the interaction between thermal and hot carriers effects, neither isothermal nor conventional macro-thermal models are adequate for state-of-the-art power heterojunction bipolar transistors (HBTs); instead, a non-isothermal hot carrier transport model, such as the thermal-fully hydrodynamic model, is required. We apply such a detailed thermal model to the simulation of an AlGaAs/GaAs HBT, comparing the results with those provided by simplified models, and highlighting how deeply both non-stationary transport and self-heating affect the predicted device performance.


IEDM Tech Impact Ionization Coefficient Auger Recombination Coefficient Energy Balance Principle High Injection Condition 


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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • A. Benvenuti
    • 1
  • G. Ghione
    • 1
  • C. U. Naldi
    • 1
  1. 1.Dipartimento di ElettronicaPolitecnico di TorinoTorinoItaly

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