Non-Stationary Transport HBT Modeling Under Non-Isothermal Conditions
Because of the interaction between thermal and hot carriers effects, neither isothermal nor conventional macro-thermal models are adequate for state-of-the-art power heterojunction bipolar transistors (HBTs); instead, a non-isothermal hot carrier transport model, such as the thermal-fully hydrodynamic model, is required. We apply such a detailed thermal model to the simulation of an AlGaAs/GaAs HBT, comparing the results with those provided by simplified models, and highlighting how deeply both non-stationary transport and self-heating affect the predicted device performance.
KeywordsIEDM Tech Impact Ionization Coefficient Auger Recombination Coefficient Energy Balance Principle High Injection Condition
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- A. Benvenuti et al., IEDM Tech. Dig.-92, pp. 737–740. 1992Google Scholar
- A. Benvenuti et al., Proc. 4th Int. Work. GaAs Tel., pp. 139–156. 1993Google Scholar
- A. Benvenuti et al., Proc. NUPAD-92, pp. 155–160. 1992Google Scholar
- P. Ciampolini et al., IEDM Tech. Dig.-92, pp. 733–736. 1992Google Scholar
- W. Quade et al., IEEE Trans. CAD, Vol. 10, pp. 1287–1294. 1991Google Scholar