Simulations of Carrier-Blocking Effects on Cutoff Frequency Characteristics for AlGaAs/GaAs HBTs with Insulating and Semi-Insulating External Collectors

  • K. Horio
  • A. Nakatani
Conference paper


Two-dimensional simulation of AlGaAs/GaAs HBTs with a perfectly insulating external collector is performed. It is shown that the cutoff frequency can degrade heavily due to its carrier blocking effect that leads to an increase in base delay time. In relation to this effect, a design criterion for collector-up HBTs will also be discussed.


Collector Structure Electron Density Profile Heterojunction Bipolar Transistor Collector Region External Base 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • K. Horio
    • 1
  • A. Nakatani
    • 1
  1. 1.Faculty of Systems EngineeringShibaura Institute of TechnologyOmiya 330Japan

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