Simulations of Carrier-Blocking Effects on Cutoff Frequency Characteristics for AlGaAs/GaAs HBTs with Insulating and Semi-Insulating External Collectors
Two-dimensional simulation of AlGaAs/GaAs HBTs with a perfectly insulating external collector is performed. It is shown that the cutoff frequency can degrade heavily due to its carrier blocking effect that leads to an increase in base delay time. In relation to this effect, a design criterion for collector-up HBTs will also be discussed.
KeywordsCollector Structure Electron Density Profile Heterojunction Bipolar Transistor Collector Region External Base
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- K. Norio, A. Oguchi, and H. Yanai, “Two-dimensional simulation of A1GaAs/GaAs HBTs with various collector structures”, Proceedings of SISDEP’91,pp.81–90, 1991Google Scholar