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On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance

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Book cover Simulation of Semiconductor Devices and Processes

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Abstract

For device models which consider energy transport the modeling of the flux components due to spatially inhomogeneous carrier temperatures is still a controversial issue. In this paper the influence of these flux components on device and circuit performance is evaluated by the example of a state of the art bipolar technology using mixed level 2D-device/circuit simulation.

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References

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Author information

Authors and Affiliations

  1. Institut für Theoretische Elektrotechnik, University of Aachen, Kopernikusstraße 16, D-52074, Aachen, Germany

    M. Stecher, B. Meinerzhagen, I. Bork & W. L. Engl

Authors
  1. M. Stecher
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  2. B. Meinerzhagen
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  3. I. Bork
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  4. W. L. Engl
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Stecher, M., Meinerzhagen, B., Bork, I., Engl, W.L. (1993). On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_11

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_11

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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