Analytical Model of the Metal-Semiconductor Contact for Device Simulation
We report on the implementation and first numerical results of a new analytical model of the metal-semiconductor contact in a drift-diffusion device simulator. The model covers the entire range from Schottky to Ohmic contacts and fits well with experimental I(V)-characteristics of intermediately doped silicon.
KeywordsOhmic Contact Barrier Tunneling Parabolic Cylinder Function Surface Doping Thermionic Field Emission
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