Analytical Model of the Metal-Semiconductor Contact for Device Simulation

  • A. Schenk
  • S. Müller


We report on the implementation and first numerical results of a new analytical model of the metal-semiconductor contact in a drift-diffusion device simulator. The model covers the entire range from Schottky to Ohmic contacts and fits well with experimental I(V)-characteristics of intermediately doped silicon.


Ohmic Contact Barrier Tunneling Parabolic Cylinder Function Surface Doping Thermionic Field Emission 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • A. Schenk
    • 1
  • S. Müller
    • 1
  1. 1.Integrated Systems LaboratoryETH-ZürichZürichSwitzerland

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