Abstract
The quasi-static approximation usually employed to model the reaction kinetics of electrons, holes, and impurities in semiconductor devices is critically re-examined. It is shown that in the case of high trap concentrations, hot carriers, low temperature operating conditions or wide-gap devices the commonly used balance equations for particle and energy flow must be supplemented by additional terms in order to correctly include the emission and capture kinetics of the free carriers.
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© 1993 Springer-Verlag Wien
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Wachutka, G. (1993). Consistent Treatment of Carrier Emission and Capture Kinetics in Electrothermal and Energy Transport Models. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_106
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_106
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
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