Consistent Treatment of Carrier Emission and Capture Kinetics in Electrothermal and Energy Transport Models
The quasi-static approximation usually employed to model the reaction kinetics of electrons, holes, and impurities in semiconductor devices is critically re-examined. It is shown that in the case of high trap concentrations, hot carriers, low temperature operating conditions or wide-gap devices the commonly used balance equations for particle and energy flow must be supplemented by additional terms in order to correctly include the emission and capture kinetics of the free carriers.
KeywordsDeep Center Consistent Treatment Shallow Impurity Current Continuity Equation Carrier Emission
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