A 2D Analytical Model of Current-Flow in Lateral Bipolar Transistor Structures
In this paper we present a new theoretical approach for analytical models of lateral bipolar transistors (CLBT, LBT) by using conformal mapping techniques. It is shown that this method leads to closed form solutions for the currents in the devices under realistic boundary conditions. Model equations for CLBT’s and LBT’s are derived and will be compared to numerical simulation results as well as to measurements.
KeywordsNumerical Simulation Result Internal Electric Field Realistic Boundary Condition Analog Integrate Circuit Lateral Device
Unable to display preview. Download preview PDF.
- H.H.Berger,U.Dreckmann: The lateral pup-transistor - a practical investigation of the DC-characteristics, IEEE Trans. Electron Devices, vol. ED-27, pp.1038–1046, July ‘79Google Scholar
- K.S.Seo, C.K.Kim: On the geometrical factor of lateral pnp-transistors, IEEE-Trans. Electron devices, vol. ED-27, pp. 295–297, Jan. ‘80Google Scholar
- D.Freund,A.Kloes,A.Kostka: A 2D-Model for current-splitting in CMOScompatible lateral bipolar transistors, accepted for publication at ESSDERC ‘83Google Scholar
- Weber: Electromagnetic fields, Volume 1, Wiley,1950Google Scholar