A 2D Analytical Model of Current-Flow in Lateral Bipolar Transistor Structures

  • D. Freund
  • A. Kloes
  • A. Kostka
Conference paper


In this paper we present a new theoretical approach for analytical models of lateral bipolar transistors (CLBT, LBT) by using conformal mapping techniques. It is shown that this method leads to closed form solutions for the currents in the devices under realistic boundary conditions. Model equations for CLBT’s and LBT’s are derived and will be compared to numerical simulation results as well as to measurements.


Numerical Simulation Result Internal Electric Field Realistic Boundary Condition Analog Integrate Circuit Lateral Device 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • D. Freund
    • 1
  • A. Kloes
    • 1
  • A. Kostka
    • 1
  1. 1.Solid State Electronics LaboratoryTechnical University of DarmstadtDarmstadtGermany

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