Abstract
We present a new algorithm for the generation of 3-dimensional (3-D) grids for the simulation of semiconductor devices. The fitting of the device geometry and the required mesh density is obtained by partitioning the elements at an optimal point at each refinement step. This allows the fitting of more general 3-D device geometries and the reduction of grid points in comparison with previous grid generators.
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References
N. Hitschfeld, P. Conti, and W. Fichtner, Mixed elements trees: A generalization of modified octrees for the generation of meshes for the simulation of complex 3-d semiconductor devices,Accepted for publication in IEEE Trans. on CAD/ICAS, 1993.
M. A. Yerry and S. Shephard, Automatic Three-dimensional Mesh Generation by the Modified-Octree Technique, Int. J. Numer. Methods Eng. p. 1965–1990, vol. 20, 1984.
N. Hitschfeld, Grid Generation for Non-Rectangular Semiconductor Devices, PhD thesis publish. by Hartung-Gorre Konstanz, Series in Microelectronics, Vol. 21, 1993.
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© 1993 Springer-Verlag Wien
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Hitschfeld, N., Fichtner, W. (1993). 3D Grid Generation for Semiconductor Devices Using a Fully Flexible Refinement Approach. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_102
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_102
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
Online ISBN: 978-3-7091-6657-4
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