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Impact of Cell Geometries and Electrothermal Effects on IGBT Latch-Up in 2D-Simulation

  • H. Brunner
  • Y. C. Gerstenmaier
  • H.-J. Mattausch
Conference paper

Abstract

The influence of the emitter cell geometry of an insulated gate bipolar transistor (IGBT) on the forward behaviour is investigated by electrothermal device simulation. For comparison isothermal device simulation is used at different temperatures. The latch-up behaviour of cellular cell and stripe designs is calculated. As a result the stripe design possesses a higher latch-up ruggedness. However the impact of the cell geometry on IGBT latch-up is affected by electrothermal effects. The variation of the collector-emitter current with the lattice temperature distribution at latch-up is different for stripe and cell designs. The temperature dependence of the junction voltage and the hole current proportion to the total current are electrothermal effects which influence IGBT latch-up.

Keywords

Cell Geometry Circular Cell Current Crowding Junction Voltage Heat Flow Equation 
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References

  1. [1]
    B.J. Baliga, “Temperature behavior of insulated gate transistor characteristics,” Solid State Electron., 28, pp.289–297 (1985)CrossRefGoogle Scholar
  2. [2]
    V. Axelrad, R. Klein “Electrothermal Simulation of an IGBT” Proceedings of 1992 ISPSD, Tokyo, pp.158–159Google Scholar
  3. [3]
    Technology Modeling Associates, Inc., Palo Alto, California, USA. MEDICI users’s manual, Jan 1992.Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • H. Brunner
    • 1
  • Y. C. Gerstenmaier
    • 1
  • H.-J. Mattausch
    • 1
  1. 1.Corporate Research and Development, Siemens AGMünchenGermany

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