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Abstract

Carrier transport has been described in the previous chapters in terms of fields, i.e. in terms of physical quantities that are defined continuously for all points in space (and time) in the simulation domain. In the drift-diffusion transport model, for instance, the state of a semiconductor device is described by the electron and hole concentration fields and the potential field. It is the task of device simulation to solve the transport equations according to the input of geometry, doping, and boundary conditions; the primary result of the simulation is the distribution of the fields inside the device. Additional information, like for instance the terminal currents, can be computed from the fields in a post-processing step.

Keywords

Dirichlet Boundary Condition Interface Condition Neumann Boundary Condition Simulation Domain Schottky Contact 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1994

Authors and Affiliations

  • Dietmar Schroeder
    • 1
  1. 1.Technische ElektronikTechnische Universität Hamburg-HarburgHamburgFederal Republic of Germany

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