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Part of the book series: Computational Microelectronics ((COMPUTATIONAL))

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Abstract

Although the gate of a MOSFET (metal-oxide field-effect transistor) is in fact a semiconductor-insulator interface, which has already been discussed in Chapter 5, it shall receive special attention in this chapter because of the special importance of MOSFETs. In this context, we will not discuss the entirety of electron transport along the channel and across the gate; this topic would fill a whole book on its own, see e.g. [4]. Merely, we shall concentrate on peculiar effects on carrier transport that are caused by the presence of the insulator interface.

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© 1994 Springer-Verlag Wien

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Schroeder, D. (1994). MOSFET Gate. In: Modelling of Interface Carrier Transport for Device Simulation. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6644-4_8

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  • DOI: https://doi.org/10.1007/978-3-7091-6644-4_8

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7368-8

  • Online ISBN: 978-3-7091-6644-4

  • eBook Packages: Springer Book Archive

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