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MOSFET Gate

  • Dietmar Schroeder
Part of the Computational Microelectronics book series (COMPUTATIONAL)

Abstract

Although the gate of a MOSFET (metal-oxide field-effect transistor) is in fact a semiconductor-insulator interface, which has already been discussed in Chapter 5, it shall receive special attention in this chapter because of the special importance of MOSFETs. In this context, we will not discuss the entirety of electron transport along the channel and across the gate; this topic would fill a whole book on its own, see e.g. [4]. Merely, we shall concentrate on peculiar effects on carrier transport that are caused by the presence of the insulator interface.

Keywords

Boltzmann Equation Spherical Harmonic Expansion Surface Scattering Insulator Interface Surface Mobility 
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Copyright information

© Springer-Verlag Wien 1994

Authors and Affiliations

  • Dietmar Schroeder
    • 1
  1. 1.Technische ElektronikTechnische Universität Hamburg-HarburgHamburgFederal Republic of Germany

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