Metal-Semiconductor Contact

  • Dietmar Schroeder
Part of the Computational Microelectronics book series (COMPUTATIONAL)


Contact models have been playing a role in device simulation from its early beginnings [97], [98], [94], [95], because every device needs contacts for the application of voltages and the provision of electric currents. Both low resistance (ohmic) and rectifying (Schottky) contacts are thus essential parts of many semiconductor devices. Accordingly, models for ohmic as well as Schottky contacts have been established in many device simulation programs. These models are introduced as boundary conditions for the numerical solution of the semiconductor transport equations.


Barrier Height Ohmic Contact Thermionic Emission Minority Carrier Depletion Region 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Copyright information

© Springer-Verlag Wien 1994

Authors and Affiliations

  • Dietmar Schroeder
    • 1
  1. 1.Technische ElektronikTechnische Universität Hamburg-HarburgHamburgFederal Republic of Germany

Personalised recommendations