Contact models have been playing a role in device simulation from its early beginnings , , , , because every device needs contacts for the application of voltages and the provision of electric currents. Both low resistance (ohmic) and rectifying (Schottky) contacts are thus essential parts of many semiconductor devices. Accordingly, models for ohmic as well as Schottky contacts have been established in many device simulation programs. These models are introduced as boundary conditions for the numerical solution of the semiconductor transport equations.
KeywordsBarrier Height Ohmic Contact Thermionic Emission Minority Carrier Depletion Region
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