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T2CAD: Total Design for Sub-um Process and Device Optimization with Technology-CAD

  • Hiroo Masuda

Abstract

“T2CAD (Total-Technology-CAD)” is proposed as an application technology of process & device simulators, which provides useful and important data for VLSI process design and optimization. It includes (1) reliability & accuracy of TCAD simulations and (2) process and device optimization method with TCAD, as well as (3) application methodology to VLSI chip design. A sub-um CMOS technology for Mega-bit DRAMs has been optimized based on T2CAD.

Keywords

Drain Current Dynamic Random Access Memory Total Design Device Optimization Gate Oxide Thickness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    H. Masuda et al.; ‘TCAD strategy for predictive VLSI memory development’, Technical Digest of IEDM’94, pp. 153–156, Dec. 1994.Google Scholar
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    H. Sato et al.; ‘A new hierarchical RSM for TCAD-based device design to predict CMOS development’, Technical Digest of ICMTS’95, pp. 299–302, March 1995.Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • Hiroo Masuda
    • 1
  1. 1.Hitachi, Ltd.Ome-shi, TokyoJapan

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