Abstract
Improved NGP and CIC particle-mesh schemes are suggested, and a NEC scheme proposed, to help reduce self forces in Monte Carlo semiconductor device simulation. An attempt to design a scheme with reduced self forces for unstructured triangular meshes is unsuccessful.
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References
R.W. Hockney and J.W. Eastwood, Computer Simulation Using Particles, Adam Hilger, New York, 1988.
K. Throngnumchai, K. Asada and T. Sugano, “Modeling of 0.1-µm MOSFET on SOI Structure Using Monte Carlo Simulation Technique” IEEE Trans. Electron Devices, vol. 33, no. 7, pp. 1005–1011, 1986.
J.M. Higman, K. Hess, C.G. Hwang, and R.W. Dutton, “Coupled Monte Carlo-Drift Diffusion Analysis of Hot-Electron Effects in MOSFET’s”, IEEE Trans. Electron Devices, vol. 36, no. 5, pp. 930–937, 1989.
O.C. Zienkiewicz, The Finite Element Method, McGraw-Hill, New York, 1977.
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© 1995 Springer-Verlag Wien
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Laux, S.E. (1995). On Particle-Mesh Coupling in Monte Carlo Semiconductor Device Simulation. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_98
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_98
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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