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A New Statistical Enhancement Technique in Parallelized Monte Carlo Device Simulation

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Simulation of Semiconductor Devices and Processes

Abstract

A new statistical enhancement technique (split-and-remove technique) in Monte Carlo device simulation, which is suitable for parallel processing, has been developed. By using this technique, an accurate energy distribution function near the drain edge can be obtained within a reasonable CPU time.

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References

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© 1995 Springer-Verlag Wien

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Shigeta, K., Tanaka, K., Iizuka, T., Kato, H., Matsumoto, H. (1995). A New Statistical Enhancement Technique in Parallelized Monte Carlo Device Simulation. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_93

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  • DOI: https://doi.org/10.1007/978-3-7091-6619-2_93

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7363-3

  • Online ISBN: 978-3-7091-6619-2

  • eBook Packages: Springer Book Archive

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