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Monte Carlo Simulation of Carrier Capture at Deep Centers for Silicon and Gallium Arsenide Devices

  • A. Palma
  • J. A. Jiménez-Tejada
  • A. Godoy
  • J. E. Carceller
Conference paper

Abstract

This work provides a direct way to include multiphonon capture at deep levels in the simulation of electron transport by the Monte Carlo method. This has been possible by adding the capture probability as one more scattering probability together with lattice mechanisms. To check this probability, numerical capture cross sections for deep centers in Si and GaAs obtained by our method have been fitted with experimental measurements.

Keywords

Monte Carlo Simulation Capture Probability Capture Cross Section Gallium Arsenide Deep Center 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • A. Palma
    • 1
  • J. A. Jiménez-Tejada
    • 1
  • A. Godoy
    • 1
  • J. E. Carceller
    • 1
  1. 1.Departamento de Electrónica y Tecnologia de Computadores. Facultad de CienciasUniversidad de GranadaGranadaSpain

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