Monte Carlo Simulation of Carrier Capture at Deep Centers for Silicon and Gallium Arsenide Devices
This work provides a direct way to include multiphonon capture at deep levels in the simulation of electron transport by the Monte Carlo method. This has been possible by adding the capture probability as one more scattering probability together with lattice mechanisms. To check this probability, numerical capture cross sections for deep centers in Si and GaAs obtained by our method have been fitted with experimental measurements.
KeywordsMonte Carlo Simulation Capture Probability Capture Cross Section Gallium Arsenide Deep Center
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