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HFET Breakdown Study by 2D and Quasi 2D Simulations: Topology Influence

  • Y. Butel
  • J. Hédoire
  • J. C. De Jaeger
  • M. Lefebvre
  • G. Salmer
Conference paper

Abstract

The study of breakdown phenomena is very important for power devices. Indeed, it constitutes a great limitation for the performance. This paper proposes to study this phenomenon by two means: a two dimensional energy model and a quasi two dimensional model. The aim of this work is the optimization of the shape of the gate-recess in order to improve the breakdown voltage, taking into account the microwave performance.

Keywords

Breakdown Voltage Gate Length Power Device Large Computing Time Breakdown Phenomenon 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    T. Shawki, G. Salmer and O. El Sayed, IEEE Trans. on E.D. Vol. 37, p 20–21, n°1, 1990.Google Scholar
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    H. Happy, G. Dambrine, J. Alamkan, F. Danneville, F. Kaptche-Tagne and A. Cappy. Int. J. of Micro. and mm-Wave Comp.-Aided Eng. Vol. 3, n° 1, 1993.Google Scholar
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    4th Esprit-Classic report, March 1994.Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • Y. Butel
    • 1
  • J. Hédoire
    • 1
  • J. C. De Jaeger
    • 1
  • M. Lefebvre
    • 1
  • G. Salmer
    • 1
  1. 1.IEMN-DHS, U.M.R C.N.R.S 9929Villeneuve D’ Ascq CEDEXFrance

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