HFET Breakdown Study by 2D and Quasi 2D Simulations: Topology Influence
The study of breakdown phenomena is very important for power devices. Indeed, it constitutes a great limitation for the performance. This paper proposes to study this phenomenon by two means: a two dimensional energy model and a quasi two dimensional model. The aim of this work is the optimization of the shape of the gate-recess in order to improve the breakdown voltage, taking into account the microwave performance.
KeywordsBreakdown Voltage Gate Length Power Device Large Computing Time Breakdown Phenomenon
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- T. Shawki, G. Salmer and O. El Sayed, IEEE Trans. on E.D. Vol. 37, p 20–21, n°1, 1990.Google Scholar
- H. Happy, G. Dambrine, J. Alamkan, F. Danneville, F. Kaptche-Tagne and A. Cappy. Int. J. of Micro. and mm-Wave Comp.-Aided Eng. Vol. 3, n° 1, 1993.Google Scholar
- 4th Esprit-Classic report, March 1994.Google Scholar