A New Quasi-two Dimensional HEMT Model

  • C. G. Morton
  • C. M. Snowden
  • M. J. Howes
Conference paper


A Quasi-two Dimensional HEMT model is presented which for the first time describes accurately the I-V characteristics close to device pinch-off and at high drain current. The model uses a new analytical model for describing the injection of charge into the buffer material. This analytical description works in conjunction with an asymptotic boundary condition in the charge control solution to drastically increase the computational efficiency of the model. Electron temperature is also included in the charge control model to calculate the degeneracy factor of the electron gas under the gate where velocity overshoot occurs.


Sheet Electron Charge Control Asymptotic Boundary Condition Buffer Material Degeneracy Factor 


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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • C. G. Morton
    • 1
  • C. M. Snowden
    • 1
  • M. J. Howes
    • 1
  1. 1.Department of Electronic and Electrical EngineeringUniversity of LeedsLeedsUK

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