Abstract
A Quasi-two Dimensional HEMT model is presented which for the first time describes accurately the I-V characteristics close to device pinch-off and at high drain current. The model uses a new analytical model for describing the injection of charge into the buffer material. This analytical description works in conjunction with an asymptotic boundary condition in the charge control solution to drastically increase the computational efficiency of the model. Electron temperature is also included in the charge control model to calculate the degeneracy factor of the electron gas under the gate where velocity overshoot occurs.
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© 1995 Springer-Verlag Wien
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Morton, C.G., Snowden, C.M., Howes, M.J. (1995). A New Quasi-two Dimensional HEMT Model. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_86
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_86
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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