Abstract
This paper reports on simulation techniques developed for the modelling and optimisation of complete, 2 × 2 cm2, high-efficiency silicon solar cells. We use three-dimensional (3d) device simulation to extract a J-V curve of an interior section of a cell. 2D simulations of the cell perimeter are then used to correct the J-V curves for the loss of carriers across the cell boundary. The resulting characteristics are input to a circuit simulation which connects the various cell sections into a model of a full cell. The J-V curve which results from that simulation can be directly compared to measured data. We find excellent agreement between simulation and measurement.
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References
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© 1995 Springer-Verlag Wien
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Heiser, G., Altermatt, P.P., Litsios, J. (1995). Combining 2D and 3D Device Simulation with Circuit Simulation for Optimising High-Efficiency Silicon Solar Cells. In: Ryssel, H., Pichler, P. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6619-2_85
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DOI: https://doi.org/10.1007/978-3-7091-6619-2_85
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7363-3
Online ISBN: 978-3-7091-6619-2
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