Advertisement

A new physical compact model of CLBTs for circuit simulation including two-dimensional calculations

  • D. Freund
  • A. Kostka
Conference paper

Abstract

A new, physics-based compact model for CMOS-compatible, lateral bipolar transistors is presented. For the calculation of DC collector and base currents including the influence of gate-voltage, Early- and Late-effect and the extended base resistance, a specially developed, fully 2-dimensional analysis is used resulting in closed-form analytical equations that only need device geometry and technological data as parameters. In this way, parameter extraction is drastically simplified. Together with state-of-the-art AC components, the complete model has been implemented in ELDO; its predictive abilities favourably compare with measurements on devices fabricated in different technologies, where standard models tend to fail.

Keywords

Collector Current Parameter Extraction Base Current Circuit Simulation Compact Model 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    B. Ankele, F. Schrank, Proc. EuroAsic 91, p. 192–197, 1991Google Scholar
  2. [2]
    X. Arreguit, “Compatible Lateral Bipolar Transistors in CMOS Technology”, Dis sertation EPFL Lausanne, 1989Google Scholar
  3. [3]
    D. Freund, A. Klös, A. Kostka, in: Proc. SISDEP 93, pp. 425–428, Springer-Verlag, Wien (1993)Google Scholar
  4. [4]
    ELDO-CFAS User’s Manual, Rel.: 1.0, Anacad GmBH, 1994Google Scholar

Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • D. Freund
    • 1
  • A. Kostka
    • 2
  1. 1.Braun AG, T-EAEKronbergGermany
  2. 2.Solid-State Electronics LaboratoryTechnical University of DarmstadtDarmstadtGermany

Personalised recommendations