A new physical compact model of CLBTs for circuit simulation including two-dimensional calculations
A new, physics-based compact model for CMOS-compatible, lateral bipolar transistors is presented. For the calculation of DC collector and base currents including the influence of gate-voltage, Early- and Late-effect and the extended base resistance, a specially developed, fully 2-dimensional analysis is used resulting in closed-form analytical equations that only need device geometry and technological data as parameters. In this way, parameter extraction is drastically simplified. Together with state-of-the-art AC components, the complete model has been implemented in ELDO; its predictive abilities favourably compare with measurements on devices fabricated in different technologies, where standard models tend to fail.
KeywordsCollector Current Parameter Extraction Base Current Circuit Simulation Compact Model
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