A new physical compact model of CLBTs for circuit simulation including two-dimensional calculations

  • D. Freund
  • A. Kostka
Conference paper


A new, physics-based compact model for CMOS-compatible, lateral bipolar transistors is presented. For the calculation of DC collector and base currents including the influence of gate-voltage, Early- and Late-effect and the extended base resistance, a specially developed, fully 2-dimensional analysis is used resulting in closed-form analytical equations that only need device geometry and technological data as parameters. In this way, parameter extraction is drastically simplified. Together with state-of-the-art AC components, the complete model has been implemented in ELDO; its predictive abilities favourably compare with measurements on devices fabricated in different technologies, where standard models tend to fail.


Collector Current Parameter Extraction Base Current Circuit Simulation Compact Model 
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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • D. Freund
    • 1
  • A. Kostka
    • 2
  1. 1.Braun AG, T-EAEKronbergGermany
  2. 2.Solid-State Electronics LaboratoryTechnical University of DarmstadtDarmstadtGermany

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