Investigation of Silicon Carbide Diode Structures via Numerical Simulations Including Anisotropic Effects
The Poisson’s and continuity equations based SiC-DYNAMIT-1DT/2DT simulators with anisotropic material analysis capabilities were developed. A comparison of experimental and simulated forward I/V curves for three 6H-SiC P+NN+ diodes is presented and the related model parameter adjustment problems are discussed. The influence of the strong electron mobility anisotropy on carrier distributions is investigated and the existence of a “mobility anisotropy induced anomalous charge accumulation effect” is demonstrated.
KeywordsDiode Structure Conductivity Anisotropy Bottom Contact Field Penetration Depth Mobility Anisotropy
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