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Investigation of Silicon Carbide Diode Structures via Numerical Simulations Including Anisotropic Effects

  • E. Velmre
  • A. Udal
  • F. Masszi
  • E. Nordlander
Conference paper

Abstract

The Poisson’s and continuity equations based SiC-DYNAMIT-1DT/2DT simulators with anisotropic material analysis capabilities were developed. A comparison of experimental and simulated forward I/V curves for three 6H-SiC P+NN+ diodes is presented and the related model parameter adjustment problems are discussed. The influence of the strong electron mobility anisotropy on carrier distributions is investigated and the existence of a “mobility anisotropy induced anomalous charge accumulation effect” is demonstrated.

Keywords

Diode Structure Conductivity Anisotropy Bottom Contact Field Penetration Depth Mobility Anisotropy 
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References

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Copyright information

© Springer-Verlag Wien 1995

Authors and Affiliations

  • E. Velmre
    • 1
  • A. Udal
    • 1
  • F. Masszi
    • 2
  • E. Nordlander
    • 2
    • 3
  1. 1.Inst. of ElectronicsTallinn Technical UniversityTallinnEstonia
  2. 2.Scanner Lab, Electronics Dept., Inst. of TechnologyUppsala UniversityUppsalaSweden
  3. 3.Dept. of TechnologyUniv. College of Gävle-SandvikenGävleSweden

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